Description
N-Channe OptiMOS Power-MOSFET, 25 V VDS, 170 A ID, -40 to 150 degC, MG-WDSON-2-8, Reel, Green
Scrapped
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Symbols & footprints
Technical specifications
Parameter
Value
Parameter
Value
category
Discrete Semiconductor Products
other names
BSB012NE2LXCT
current - continuous drain (id) @ 25° c
170A
package / case
3-WDSON
drain to source voltage (vdss)
25V
packaging
Cut Tape (CT)
dynamic catalog
N-Channel Logic Level Gate FETs
power - max
2.8W
family
FETs - Single
rds on (max) @ id, vgs
1.2 mOhm @ 30A, 10V
fet feature
Logic Level Gate
series
OptiMOS™
fet type
MOSFET N-Channel, Metal Oxide
standard package
1
gate charge (qg) @ vgs
67nC @ 10V
supplier device package
MG-WDSON-2, CanPAK M™
input capacitance (ciss) @ vds
4900pF @ 12V
vgs(th) (max) @ id
2V @ 250µA
mounting type
Surface Mount
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